Consider the following statements (A) and (B) and identify the correct answer. (A) A Zener diode is connected in reverse bias, when used as a voltage regulator. (B) The potential barrier of a p-n junction lies between \( 0.1\text{ V} \) to \( 0.3\text{ V} \).

Statement (A) is correct because a Zener diode is specifically designed to operate in the breakdown region under reverse bias conditions to maintain a constant voltage across the load. Statement (B) is incorrect because the typical potential barrier for a germanium p-n junction is about \( 0.3\text{ V} \) and for a silicon p-n junction is about \( 0.7\text{ V} \). Therefore, stating that the barrier potential generally lies between \( 0.1\text{ V} \) and \( 0.3\text{ V} \) is factually incorrect for standard semiconductor diodes.